Paper
12 March 2009 Design ranking and analysis methodology for standard cells and full chip physical optimization
Yosi Vaserman, Eitan Shauly
Author Affiliations +
Abstract
Device and reliability performances of Deep Sub-Micron devices depend on the physical layout and the sensitivity of this layout to the foundry process. However, layout optimization does not necessarily means layout "relaxation" for all structures. A complex design needs a "judgment" system, which will identify the "quality" of each design rule and suggest locations to be modified. Another important task is to be able quantitatively compare between layouts, designed for the same purpose (standard cells for example). In this work, we propose a "ranking" system, which analyzes the design and prioritizes the places to be modified. Our "ranking" system consists of set of rules based on the wafer foundry process. Different check rules have different impact on performance and because of that they get different priorities within the final results. Based on that, the overall design score, and the rule-priority-of-improvement are calculated. We start by presenting our ranking analysis system. Afterwards, we compare several standard cells libraries, designed by leading 3rd party IP houses. Based on the ranking results, guidelines and priority for layout modification are defined. We also discuss the impact of different DRC coding methods on the scoring values. For example, checking the overlap of M1 layer over contact by measuring the enclosure or by measuring the overlap area. Finally, we show our analysis for several similar cells as well as for a full-chip design.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yosi Vaserman and Eitan Shauly "Design ranking and analysis methodology for standard cells and full chip physical optimization", Proc. SPIE 7275, Design for Manufacturability through Design-Process Integration III, 72750R (12 March 2009); https://doi.org/10.1117/12.812972
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Design for manufacturing

Transistors

High volume manufacturing

Optical proximity correction

Semiconducting wafers

Silicon

Structural design

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