Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side

Kosuke Takai; Koji Murano; Kazuki Hagihara; Masamitsu Itoh; Tsukasa Abe; Takashi Adachi; Hideo Akizuki; Tadahiko Takikawa; Hiroshi Mohri; Naoya Hayashi

doi:10.1117/12.824332

11 May 2009 Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side

Kosuke Takai, Koji Murano, Kazuki Hagihara, Masamitsu Itoh, Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Author Affiliations +

Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73792I (2009) https://doi.org/10.1117/12.824332
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan

Abstract

Extreme Ultra Violet Lithography (EUVL) is the most leading next generation lithographic technology post ArF immersion lithography. The Structure of EUV mask differ from traditional photomask., especially backside coating. E-chuck is employed to fix the EUV mask on the scanner. Therefore a conductive film on backside of the EUV mask blank is needed. We investigated what have an influence on mask manufacturing process caused by the backside coating differed from a traditional photomask. From our experiment, at the mask fabrication process, especially RIE process to etch Ta absorber, the CD variation is occurred by electric conduction between the backside conductive coating and the absorber on the Mo/Si multi-layer. As a result, the EUV mask blank without electric conduction between the backside conductive coating and the absorber on the Mo/Si multilayer is necessary.

Citation Download Citation

Kosuke Takai, Koji Murano, Kazuki Hagihara, Masamitsu Itoh, Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Tadahiko Takikawa, Hiroshi Mohri, and Naoya Hayashi "Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792I (11 May 2009); https://doi.org/10.1117/12.824332

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