Effect of power on the structure and property of copper nitride films by DC reactive magnetron sputtering

Xing-Ao Li; Jian-Ping Yang; An-You Zuo; Zuo-Bin Yuan; Zhu-Lin Weng; Xiao-Yong Xiong

doi:10.1117/12.833436

24 August 2009 Effect of power on the structure and property of copper nitride films by DC reactive magnetron sputtering

Xing-Ao Li, Jian-Ping Yang, An-You Zuo, Zuo-Bin Yuan, Zhu-Lin Weng, Xiao-Yong Xiong

Author Affiliations +

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738110 (2009) https://doi.org/10.1117/12.833436
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Copper nitride thin films were deposited on glass substrates by reactive DC (direct current) magnetron sputtering with 0.8Pa N₂-gas partial pressure (the total pressure was 1Pa), 100°C substrate temperature and different DC powers. X-ray diffraction measurements show that the films are composed of Cu₃N crystallites with anti-ReO₃ structure and exhibit preferential orientation to the [111] direction. The intensity of the preferred crystalline orientation of the films increased with DC power. It is found that the DC power not only affects the crystal structure of the Cu₃N films but also affects its resistivity. The resistivity of Cu₃N films decreased sharply with increasing of the DC power, reaching a value 1.33Ωcm. From this work, it is concluded that the optimum DC sputtering power for producing high-quality and well [111]-oriented Cu₃N films on glass substrates is 80W, with 0.8Pa N₂-gas partial pressure and 100⁰C substrate temperature.

Citation Download Citation

Xing-Ao Li, Jian-Ping Yang, An-You Zuo, Zuo-Bin Yuan, Zhu-Lin Weng, and Xiao-Yong Xiong "Effect of power on the structure and property of copper nitride films by DC reactive magnetron sputtering", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738110 (24 August 2009); https://doi.org/10.1117/12.833436

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available