Paper
31 December 2009 Clarifying coverages on the basis of tapes SnO2, SiO2, Si3N4 for photodiodes of ultraviolet and visible range
Yu. George Dobrovolsciy, Vladimir L. Perevertaylo, Boris G. Shabashcevich, Leonid J. Pidkamin
Author Affiliations +
Proceedings Volume 7388, Ninth International Conference on Correlation Optics; 738815 (2009) https://doi.org/10.1117/12.855112
Event: Correlation Optics 2009, 2009, Chernivsti, Ukraine
Abstract
It is shown, what coverage of dioxide of tin is instrumental in the rise of sensitiveness of photodiodes sensible in the ultraviolet region of spectrum on the basis of selenid zinc and phosphide of gallium to 0,12 A/W and 0,2 A/W accordingly in the maximum of spectral description of sensitiveness. All so it is shown, that tape of nitrid silicon - dioxide of silicon a bit better clarifies silicon photodiode, especially on a wave-length 700 nm. Gluing composition, in general, worsens admission of tapes, and in a greater degree the admission of tape of nitrid silicon - dioxide of silicon.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu. George Dobrovolsciy, Vladimir L. Perevertaylo, Boris G. Shabashcevich, and Leonid J. Pidkamin "Clarifying coverages on the basis of tapes SnO2, SiO2, Si3N4 for photodiodes of ultraviolet and visible range", Proc. SPIE 7388, Ninth International Conference on Correlation Optics, 738815 (31 December 2009); https://doi.org/10.1117/12.855112
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KEYWORDS
Photodiodes

Silicon

Ultraviolet radiation

Silica

Zinc

Gallium

PIN photodiodes

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