Paper
6 November 2009 Plasma characterization of Tetra III chrome etch system
Michael Grimbergen, D. G. Nest, Keven Yu, T. Y. Becky Leung, Madhavi Chandrachood, Alan Ouye, Saravjeet Singh, Ibrahim Ibrahim, Ajay Kumar, David Graves
Author Affiliations +
Abstract
Both Langmuir probe and spatial optical emission spectroscopy (OES) measurements have been used to characterize the TetraTM chrome etch chamber. Langmuir data was measured over a range of process pressures between 1.5mT and 10mT and source powers between 150W and 500W. At 350W, the data show electron and ion densities near 1 x 109 cm-3 for Ar and for Cl2/O2 etch plasmas. Ion density trends with pressure were observed to be opposite for the two plasmas. The effect of the third electrode designed in the chamber was demonstrated to reduce ion density by more than an order of magnitude for Ar plasma and still lower for Cl2/O2 plasma. Electron temperature and plasma potential are also reduced. Radial OES measurements are reported with a new apparatus that yields direct spatial emission data. Spatial scans of infrared emission from atomic Cl were measured under a range of several chamber conditions already measured with the Langmuir probe. The scans showed that the emission uniformity above the mask can be adjusted to a flat profile by selection of the process condition.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Grimbergen, D. G. Nest, Keven Yu, T. Y. Becky Leung, Madhavi Chandrachood, Alan Ouye, Saravjeet Singh, Ibrahim Ibrahim, Ajay Kumar, and David Graves "Plasma characterization of Tetra III chrome etch system", Proc. SPIE 7488, Photomask Technology 2009, 74880L (6 November 2009); https://doi.org/10.1117/12.833490
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KEYWORDS
Plasma

Ions

Electrodes

Etching

Argon

Chlorine

Plasma etching

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