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Nickel phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface
morphology is characterized by SEM. A silicon-based nickel phthalocyanine film gas sensor for NO2 detection is
fabricated by MEMS technology. The results show that the current of nickel phthalocyanine film increase obviously
from 3×10-2μA to 1.08μA as the NO2 concentration increases from 0 ppm to 160 ppm. However, the sensitivity of NiPc
thin film gas sensor nearly keeps a constant of 0.94 (average) between 10 ppm and 120 ppm with increasing NO2
concentration. The best working temperature of the gas sensor is 50°C for NO2 gas concentrations of 10 ppm, which is
much lower than that of general metal oxide gas sensor.
Cheng-jun Qiu,Yan-wei Dou,Wei Qu, andYan-mei Sun
"Nitrogen dioxide sensing properties and mechanism of nickel phthalocyanine film", Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 749366 (20 October 2009); https://doi.org/10.1117/12.840319
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Cheng-jun Qiu, Yan-wei Dou, Wei Qu, Yan-mei Sun, "Nitrogen dioxide sensing properties and mechanism of nickel phthalocyanine film," Proc. SPIE 7493, Second International Conference on Smart Materials and Nanotechnology in Engineering, 749366 (20 October 2009); https://doi.org/10.1117/12.840319