Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation

Valentin O. Turin; Alexander V. Sedov; Gennady I. Zebrev; Benjamin Iñiguez; Michael S. Shur

doi:10.1117/12.853740

26 February 2010 Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation

Valentin O. Turin, Alexander V. Sedov, Gennady I. Zebrev, Benjamin Iñiguez, Michael S. Shur

Author Affiliations +

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75211H (2010) https://doi.org/10.1117/12.853740
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

Entry level MOSFET and TFT models use channel-length modulation parameter λ to account for differential conductance after saturation. This is done by multiplying the expression for the drain current but the 1+λV_DS factor, where V_DS is the drain-to-source bias. However, this traditional approach suffers from non-monotonic behavior of the differential conductance with increasing drain-to-source bias. In the improved model, we offer a new approach that gives the correct monotonic decrease of the differential conductance. This improved model uses the standard set of MOSFET compact model parameters making it compatible with existing CAD tools.

Citation Download Citation

Valentin O. Turin, Alexander V. Sedov, Gennady I. Zebrev, Benjamin Iñiguez, and Michael S. Shur "Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75211H (26 February 2010); https://doi.org/10.1117/12.853740

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