Original GaN-based LED structure on ZnO template by MOCVD

Ray-Ming Lin; Sheng-Fu Yu; Miin-Jang Chen; Wen-Ching Hsu

doi:10.1117/12.841336

12 March 2010 Original GaN-based LED structure on ZnO template by MOCVD

Ray-Ming Lin, Sheng-Fu Yu, Miin-Jang Chen, Wen-Ching Hsu

Proceedings Volume 7602, Gallium Nitride Materials and Devices V; 76021L (2010) https://doi.org/10.1117/12.841336
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

In this study, we have successfully grown blue LED structure on ZnO template (deposited on sapphire substrate by atomic layer deposition, ALD) by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD). Although GaN semiconductor material is very similar to ZnO in many ways, i.e. relatively small lattice mismatch ~1.8 % compared with traditional sapphire substrate~16 %, it still has a big challenge when GaN-based LEDs grow on ZnO template at usually growth temperature near 1100°C. With too high a temperature and a long deposited time, it would cause reaction at GaN/ZnO interface which is a vital reason that degrades the GaN crystalline quality. In view of this, we introduced an optimized thin AlN cover layer on ZnO template protecting the underneath ZnO layer and then obtained a real work LED structure. Meanwhile, the TEM measurement characterized the epilayer crystalline structure. The optical properties also were carried out by photoluminescence and electroluminescence analysis. Finally, with a suitable fabrication of LED processing, the ZnO template may has the potential as a sacrificial layer by chemical etching technical instead of conventional laser lifted-off.

Citation Download Citation

Ray-Ming Lin, Sheng-Fu Yu, Miin-Jang Chen, and Wen-Ching Hsu "Original GaN-based LED structure on ZnO template by MOCVD", Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021L (12 March 2010); https://doi.org/10.1117/12.841336

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