InGaAsSb LED arrays (lambda = 3.7 µm) with photonic crystals

B. A. Matveev; Yu. M. Zadiranov; A. L. Zakgeim; N. D. Il'inskaya; S. A. Karandashev; M. A. Remennyy; N. M. Stus'; A. A. Usikova; A. E. Cherniakov

doi:10.1117/12.841689

23 February 2010 InGaAsSb LED arrays (λ = 3.7 μm) with photonic crystals

B. A. Matveev, Yu. M. Zadiranov, A. L. Zakgeim, N. D. Il'inskaya, S. A. Karandashev, M. A. Remennyy, N. M. Stus', A. A. Usikova, A. E. Cherniakov

Author Affiliations +

Proceedings Volume 7609, Photonic and Phononic Crystal Materials and Devices X; 76090I (2010) https://doi.org/10.1117/12.841689
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We present L-I, I-V and spectral characteristics at 300 and 77 K of the flip-chip LED arrays based on p-InAsSbP/n- InGaAsSb heterostrucutres with photonic crystal formed onto an outcoupling n⁺-InAs substrate. We also describe results on IR imaging (2D radiation mapping) and near and far field patterns in forward biased LEDs.

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B. A. Matveev, Yu. M. Zadiranov, A. L. Zakgeim, N. D. Il'inskaya, S. A. Karandashev, M. A. Remennyy, N. M. Stus', A. A. Usikova, and A. E. Cherniakov "InGaAsSb LED arrays (λ = 3.7 μm) with photonic crystals", Proc. SPIE 7609, Photonic and Phononic Crystal Materials and Devices X, 76090I (23 February 2010); https://doi.org/10.1117/12.841689

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