Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation

Weiwei An; Xiaoli Zhao; Runzhou Su; Jingkui Li; Jiangbo Xin

doi:10.1117/12.867938

6 October 2010 Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation

Weiwei An, Xiaoli Zhao, Runzhou Su, Jingkui Li, Jiangbo Xin

Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 765505 (2010) https://doi.org/10.1117/12.867938
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Microstructures of silicon induced by pulsed laser irradiation were investigated. Microstructure evolution induced by two different laser configurations (lasers with wave length of 355 nm and 532 nm) was characterized by scanning electron microscopy. The measurement results show that periodic structure and villous structure were fabricated on silicon surface by varying the intensity of the applied lasers under atmospheric conditions. Regardless of the laser configurations used, it is found that the used laser intensity plays an important role in the microstructure formation. At low laser intensity, the main character of the irradiated surface is periodic ripples and the period of ripple structure is about 400 nm. Villus structure is the main feature formed with the increase of laser intensity. The mechanism of the villus formation induced by laser irradiation was proposed. Based on the experimental results, the clusters induced by laser irradiation recombine with each other and grow under the increase of laser intensity. During irradiation, the induced plasma expanded upward from the target surface. The clusters and ions in the plume collided with each other. Besides, the collision also happened between molecules of air and the clusters originated from target. As a result of numerous collisions, neutral molecules were dissociated into polarized nanoclusters. The induced nanoclusters redeposited on the target surface. The clusters recombine with each other and adhere to protuberance on the surface. This process results in the formation of cluster-assembled villous microstructure. The optical character of the irradiated samples was measured by FT-IR spectroscopy, and the transmission spectra were analyzed.

Citation Download Citation

Weiwei An, Xiaoli Zhao, Runzhou Su, Jingkui Li, and Jiangbo Xin "Microstructure evolution and FT-IR spectra of silicon induced by pulsed laser irradiation", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 765505 (6 October 2010); https://doi.org/10.1117/12.867938

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KEYWORDS

Laser irradiation

Silicon

Semiconductor lasers

FT-IR spectroscopy

Plasma

Scanning electron microscopy

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