Alumimun nitride piezoelectric NEMS resonators and switches

G. Piazza

doi:10.1117/12.849989

5 May 2010 Alumimun nitride piezoelectric NEMS resonators and switches

G. Piazza

Proceedings Volume 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II; 76791L (2010) https://doi.org/10.1117/12.849989
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

A major challenge associated with the demonstration of high frequency and fast NanoElectroMechanical Systems (NEMS) components is the ability to efficiently transduce the nanomechanical device. This work presents noteworthy opportunities associated with the scaling of piezoelectric aluminum nitride (AlN) films from the micro to the nano realm and their application to the making of efficient NEMS resonators and switches that can be directly interfaced with conventional electronics. Experimental data showing NEMS AlN resonators (250 nm thick with lateral features as small as 300 nm) vibrating at record-high frequencies approaching 10 GHz with Qs close to 500 are presented. These NEMS resonators could be employed as sensors to tag analyte concentrations that reach the part per trillion levels or for frequency synthesis and filtering in ultra-compact microwave transceivers. 100 nm thick AlN films have been used to fabricate NEMS actuators for mechanical computing applications. Experimental data confirming that bimorph nanopiezo- actuators have the same piezoelectric properties of microscale counterparts and can be adopted for the implementation of mechanical logic elements are presented.

Citation Download Citation

G. Piazza "Alumimun nitride piezoelectric NEMS resonators and switches", Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76791L (5 May 2010); https://doi.org/10.1117/12.849989

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