Cu/p-Si Schottky photodetectors at 1.55 um

M. Casalino; M. Gioffrè; G. Coppola; M. Iodice; L. Moretti; I. Rendina; L. Sirleto

doi:10.1117/12.855994

17 May 2010 Cu/p-Si Schottky photodetectors at 1.55 μm

M. Casalino, M. Gioffrè, G. Coppola, M. Iodice, L. Moretti, I. Rendina, L. Sirleto

Author Affiliations +

Proceedings Volume 7719, Silicon Photonics and Photonic Integrated Circuits II; 77190R (2010) https://doi.org/10.1117/12.855994
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

In this paper the realization and the characterization of a resonant cavity enhanced photodetector (RCE), completely silicon compatible and working at 1.55 micron, is reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. In order to obtain a fabrication process completely compatible with standard CMOS silicon technology, a photodetector having copper (Cu) as Schottky metal has been realized. Performances devices in terms of responsivity, free spectral range, finesse are reported.

Citation Download Citation

M. Casalino, M. Gioffrè, G. Coppola, M. Iodice, L. Moretti, I. Rendina, and L. Sirleto "Cu/p-Si Schottky photodetectors at 1.55 μm", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190R (17 May 2010); https://doi.org/10.1117/12.855994

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