Contact mask LER impact on lithographic performance

Tatsuya Nagatomo; Mitsuharu Yamana; Katsuhisa Morinaga; Masaru Higuchi; Shunsuke Sato; Tsuyoshi Tanaka

doi:10.1117/12.866397

26 May 2010 Contact mask LER impact on lithographic performance

Tatsuya Nagatomo, Mitsuharu Yamana, Katsuhisa Morinaga, Masaru Higuchi, Shunsuke Sato, Tsuyoshi Tanaka

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77481S (2010) https://doi.org/10.1117/12.866397
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

A requirement for CD control on wafer is increasing with shrinking design rule^[1]. This is especially true for dense contacts because of higher MEEF. It is considered that contact mask LER impact on lithographic performance is comparatively large. Nevertheless, a relationship between contact mask LER and wafer performance has not been evaluated in recent years. Therefore we studied contact mask roughness impact on wafer in order to determine specs for improvement of mask quality. We assumed the thin MoSi binary mask which was called Opaque MoSi On Glass (OMOG). The programmed roughness patterns data for 28 nm nodes was made. The frequency and depth of roughness was changed. In addition, we also drew bump patterns. A lithography simulator was used to investigate which kind of mask roughness impacted significantly on wafer. We compared the difference between wafer experiment and simulation. Finally a relationship between contact mask roughness and lithographic performance was obtained.

Citation Download Citation

Tatsuya Nagatomo, Mitsuharu Yamana, Katsuhisa Morinaga, Masaru Higuchi, Shunsuke Sato, and Tsuyoshi Tanaka "Contact mask LER impact on lithographic performance", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481S (26 May 2010); https://doi.org/10.1117/12.866397

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