Dry etching technologies for EUV mask

Yoshinori Iino; Makoto Karyu; Hirotsugu Ita; Tomoaki Yoshimori; Hidehito Azumano; Mikio Nonaka

doi:10.1117/12.868533

29 September 2010 Dry etching technologies for EUV mask

Yoshinori Iino, Makoto Karyu, Hirotsugu Ita, Tomoaki Yoshimori, Hidehito Azumano, Mikio Nonaka

Proceedings Volume 7823, Photomask Technology 2010; 782305 (2010) https://doi.org/10.1117/12.868533
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

When it comes to the absorber etching of EUV (Extreme Ultra-Violet) mask, it is important to understand the mechanism of how a sidewall protection film is formed in the TaBO etching process and TaBN etching process. According to our evaluations, the sidewall protection film formed in the TaBO etching process is constituted by a fluorocarbon polymer generated through the dissociation of gas, which then acts as a sidewall protection film. On the other hand, the sidewall protection film formed in the TaBN etching process is considered an etching product. By controlling those sidewall protection films, it has become possible to determine the critical dimension (CD) of TaBO for the 44-nm L/S on mask pattern (11-nm node) to implement vertical etching using TaBN in accordance with the TaBO dimension. In doing this, a CUD of 1.7 nm (3 sigma) and CD linearity of 5.2 nm (44 to 1000 nm) are achieved. To ensure a good absorber etching shape, it is necessary to keep resist until etching is complete, and for this reason the resist selection ratio is also important.

Citation Download Citation

Yoshinori Iino, Makoto Karyu, Hirotsugu Ita, Tomoaki Yoshimori, Hidehito Azumano, and Mikio Nonaka "Dry etching technologies for EUV mask", Proc. SPIE 7823, Photomask Technology 2010, 782305 (29 September 2010); https://doi.org/10.1117/12.868533

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