Growth Of ZnSe On GaAs Epitaxial Layers In A Dual Chamber Molecular Beam Epitaxy System

M. C. Tamargo; J. L. de Miguel; R. E. Nahory; B. J. Skromme

doi:10.1117/12.941006

20 April 1987 Growth Of ZnSe On GaAs Epitaxial Layers In A Dual Chamber Molecular Beam Epitaxy System

M. C. Tamargo, J. L. de Miguel, R. E. Nahory, B. J. Skromme

Proceedings Volume 0796, Growth of Compound Semiconductors; (1987) https://doi.org/10.1117/12.941006
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We have grown ZnSe epitaxial layers on GaAs bulk substrates and on GaAs epitaxial layers by molecular beam epitaxy (MBE). A dual chamber MBE system was used which enabled the growth of the GaAs/ZnSe heterostructure completely in-situ. Examination of the initial stages of growth using RHEED indicates a much improved interface when ZnSe is grown over a GaAs epitaxial layer.

Citation Download Citation

M. C. Tamargo, J. L. de Miguel, R. E. Nahory, and B. J. Skromme "Growth Of ZnSe On GaAs Epitaxial Layers In A Dual Chamber Molecular Beam Epitaxy System", Proc. SPIE 0796, Growth of Compound Semiconductors, (20 April 1987); https://doi.org/10.1117/12.941006

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