Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

Min-Shyong Lin; Hen-Chang Chou

doi:10.1117/12.941044

22 April 1987 Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

Min-Shyong Lin, Hen-Chang Chou

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941044
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Tungsten silicide has been successfully grown on GaAs using low pressure CVD. The growth mechanism is separated into surface-reaction-controlled and product-desorption-controlled regions. The former causes growth rate to increase with temperature, while the latter causes growth rate to decrease with temperature. High incorporation rate of silicon at the GaAs surface induces the Si/W ratio to go up with temperature at low temperature. The etching of Si by the product F- suppresses the growth rate at high temperature and high WF6 flow rate and also induces a critical dependence of Si/W ratio on WF6 flow rate. Tungsten silicide forms a hexagonal structure during deposition in the 370-450°C temperature range and changs to the tetragonal phase of WSi2 or W5Si3 depending on Si/W ratio after 800°C annealing. The interdiffusion of WSix/GaAs is serious at 800°C for high Si/W ratio (x>1), but no significant interdiffusion can be found for low Si/W ratio reflecting the fact that the Schottky barrier degrades to ohmic at 800°C for x=1 but still remains a good Schottky contact for x=0.6 and 0.4.

Citation Download Citation

Min-Shyong Lin and Hen-Chang Chou "Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941044

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