Paper
25 May 2011 Frequency-agile terahertz-wave sources and applications to sensitive diagnosis of semiconductor wafers
Hiroaki Minamide, Hiromasa Ito
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Abstract
We have developed ultra-widely tunable THz-wave source using organic nonlinear optical crystals such as 4- dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) and N-benzyl-2-methyl-4-nitroaniline (BNA). The THz-wave difference frequency generation using these crystals covers the ultra-widely tunable range of 0.1-40 THz with frequency agility. Collaborating with Furukawa Co. Ltd., we used the progressive, frequency-agile THz-wave source for industrial applications and produced a sensitive, non-destructive method for examining carrier-density and electrical properties of semiconductors. This method presents novel possibilities for use in the semiconductor industry.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroaki Minamide and Hiromasa Ito "Frequency-agile terahertz-wave sources and applications to sensitive diagnosis of semiconductor wafers", Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 80230I (25 May 2011); https://doi.org/10.1117/12.887941
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Terahertz radiation

Reflectivity

Semiconductors

Nonlinear crystals

Crystals

Nondestructive evaluation

Gallium nitride

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