Free-form Fresnel RXI Köhler design with spectrum-splitting for photovoltaics

M. Buljan; P. Benítez; R. Mohedano; J. C. Miñano; Y. Sun; W. Falicoff; J. Vilaplana; J. Chaves; G. Biot; J. López

doi:10.1117/12.895526

21 September 2011 Free-form Fresnel RXI Köhler design with spectrum-splitting for photovoltaics

M. Buljan, P. Benítez, R. Mohedano, J. C. Miñano, Y. Sun, W. Falicoff, J. Vilaplana, J. Chaves, G. Biot, J. López

Proceedings Volume 8167, Optical Design and Engineering IV; 81670I (2011) https://doi.org/10.1117/12.895526
Event: SPIE Optical Systems Design, 2011, Marseille, France

Abstract

Here we present a novel optical design of the high concentration photovoltaics (HPCV) nonimaging concentrator (>500x) with built-in spectrum splitting concept. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free-form RXI-type concentrator with a band-pass filter embedded in it, both POE and SOE performing Köhler integration to produce light homogenization on the target. It uses the combination of a commercial concentration GaInP/GaInAs/Ge 3J cell and a concentration Back-Point-Contact (BPC) silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell's reflection. Design targets equivalent cell efficiency ~46% using commercial 39% 3J and 26% Si cells, and CPV module efficiency greater than 38%, achieved at a concentration level larger than 500X and wide acceptance angle (±1°). A first proof-of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ~100x and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J with peak efficiency of 36.9%.

Citation Download Citation

M. Buljan, P. Benítez, R. Mohedano, J. C. Miñano, Y. Sun, W. Falicoff, J. Vilaplana, J. Chaves, G. Biot, and J. López "Free-form Fresnel RXI Köhler design with spectrum-splitting for photovoltaics", Proc. SPIE 8167, Optical Design and Engineering IV, 81670I (21 September 2011); https://doi.org/10.1117/12.895526

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