PtSi Infrared Area Array Utilizing MOS/CTD Readout

Leland R. Hudson; Hsin-Fu Tseng; Weng -Lyang Wang

doi:10.1117/12.941828

10 November 1987 PtSi Infrared Area Array Utilizing MOS/CTD Readout

Leland R. Hudson, Hsin-Fu Tseng, Weng -Lyang Wang

Proceedings Volume 0819, Infrared Technology XIII; (1987) https://doi.org/10.1117/12.941828
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

We describe the operation, construction, and performance of an infrared focal plane array that utilizes platium silicide Schottky-barrier diodes on p-type silicon as the infrared sensor and has a MOS/CTD readout structure. The i28 X 128 element array is fabricated using standard integrated circuit grade silicon and NMOS processing. Associated with each photoelement there is a MOS multiplexer switch. Parallel connection of every multiplexer switch in a row allows a digital shift register to address one row of diodes at a time. The video signals are parallel transferred through common column video lines into two bucket-brigade device (BBD) charge transfer registers for signal readout. This readout structure has the advantages of high fill factor, low noise, and large charge handling capacity. In addition, the digital scan register and the BBD registers are less susceptible to freeze-out at temperatures below 40 kelvin than a buried-channel CCD.

Citation Download Citation

Leland R. Hudson, Hsin-Fu Tseng, and Weng -Lyang Wang "PtSi Infrared Area Array Utilizing MOS/CTD Readout", Proc. SPIE 0819, Infrared Technology XIII, (10 November 1987); https://doi.org/10.1117/12.941828

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