PL and EL characteristics in Bi- and rare earth-co-doped (La1-XGaX)2O3 phosphor thin films prepared by magnetron sputtering

Toshihiro Miyata; Yuki Nishi; Tadatsugu Minami

doi:10.1117/12.903176

23 December 2011 PL and EL characteristics in Bi- and rare earth-co-doped (La_1-XGa_X)₂O₃ phosphor thin films prepared by magnetron sputtering

Toshihiro Miyata, Yuki Nishi, Tadatsugu Minami

Author Affiliations +

Proceedings Volume 8204, Smart Nano-Micro Materials and Devices; 820436 (2011) https://doi.org/10.1117/12.903176
Event: SPIE Smart Nano + Micro Materials and Devices, 2011, Melbourne, Australia

Abstract

Multicolor photoluminescence (PL) and electroluminescence (EL) were observed from newly developed Bi- and rare earth (RE)-co-doped (La_1-XGa_X)₂O₃ ((La_1-XGa_X)₂O₃:Bi,RE) phosphor thin films. (La_1-XGa_X)₂O₃:Bi,RE phosphor thin films were prepared by varying the Ga content (Ga/(La+Ga) atomic ratio) or the co-doped RE content (RE/(RE+La+Ga) atomic ratio) under co-doping Bi at a constant content (Bi/(Bi+La+Ga) atomic ratio) of 3 at.% using a combinatorial r.f. magnetron sputtering deposition method. High PL intensity was obtained in postannealed (La_0.9Ga_0.1)₂O₃:Bi,RE phosphor thin films prepared with a Ga content around 10 at.%; TFEL devices fabricated using the phosphor thin films exhibited high luminance. The obtained luminance intensities in EL and PL in the phosphor thin films prepared with various contents of co-doped RE, such as Dy, Er, Eu, Tb and Tm changed considerably as the kind and content of RE were varied. Color changes from blue and blue-green to various colors in PL and EL emissions, respectively, were obtained in postannealed (La_0.9Ga_0.1)₂O₃:Bi,RE phosphor thin films, i.e., films prepared by co-doping Bi at a constant content with various REs at varying levels of content. All the observed emission peaks in PL and EL from (La0_.9Ga_0.1)₂O₃:Bi,RE phosphor thin films were assigned to either the broad emission originating from the transition in Bi³⁺ or the visible emission peaks originating from the transition in the co-doped trivalent RE ion.

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Toshihiro Miyata, Yuki Nishi, and Tadatsugu Minami "PL and EL characteristics in Bi- and rare earth-co-doped (La_1-XGa_X)₂O₃ phosphor thin films prepared by magnetron sputtering", Proc. SPIE 8204, Smart Nano-Micro Materials and Devices, 820436 (23 December 2011); https://doi.org/10.1117/12.903176

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KEYWORDS

Thin films

Electroluminescence

Gallium

Bismuth

Thin film devices

Deposition processes

Ions

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