Hardened planar nitride based cold cathode electron emitter

R. Pillai; D. Starikov; C. Boney; A. Bensaoula

doi:10.1117/12.909587

27 February 2012 Hardened planar nitride based cold cathode electron emitter

R. Pillai, D. Starikov, C. Boney, A. Bensaoula

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82620O (2012) https://doi.org/10.1117/12.909587
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Low threshold electron emission from planar AlN/Silicon heterostructures is reported. The surface emitting ballistic electron structure consisted of an undoped AlN layer grown on Silicon by Molecular Beam Epitaxy, a Ti/Au Ohmic contact, and a thin Pt Schottky contact fabricated by e-beam deposition. Tunnel-transparent Pt Schottky contact was deposited on a 1 μm thick Silicon Dioxide (SiO₂) layer and covered a 4 x 4 matrix of 50 μm diameter via produced in the SiO₂ layer using photolithography The measurements were performed in vacuum (~10^-8 Torr) using a metal grid separated from the structure by a 60 micron thick Kapton^® polyimide film having an opening aligned with the via. Bias voltages in the range of 0-130 V were applied across the Schottky diode, while currents were recorded across the structure for grid voltages ranging from 0 to 50 V. The field emission nature of the measured currents was confirmed by plotting the Fowler-Nordheim dependence. Current density of at least 2.5x10^-4A/cm² was achieved for a grid voltage of 50 V and a bias of 130 V. Degradation of the structure performance was observed at bias voltages exceeding 90 V as a result of Schottky barrier modification under the elevated temperature and high electric field operation. The solid-state electron emitting structure indicated a threshold field as low as 0.2 V/μm under applied grid voltage of 12 V.

Citation Download Citation

R. Pillai, D. Starikov, C. Boney, and A. Bensaoula "Hardened planar nitride based cold cathode electron emitter", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620O (27 February 2012); https://doi.org/10.1117/12.909587

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