GaSb-based laser monolithically grown on Si substrate by molecular beam epitaxy

L. Cerutti; J. B. Rodriguez; J. R. Reboul; E. Tournié

doi:10.1117/12.908464

20 January 2012 GaSb-based laser monolithically grown on Si substrate by molecular beam epitaxy

L. Cerutti, J. B. Rodriguez, J. R. Reboul, E. Tournié

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82681I (2012) https://doi.org/10.1117/12.908464
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Integration of semiconductor laser diodes on Si substrates will allow the realization of complex photonics circuits with new functionalities. A promising way to combine the well known Si technology with III-V semiconductors is the direct growth of the Sb-based materials. Indeed, GaSb, AlSb, InAs and their related alloys offer a large range of band-gaps and band-offsets. High performance Sb-based lasers and detectors operating in the mid-infrared wavelength range as well as high speed and low consumption field effect transistors have already been demonstrated using these materials. We investigated the potential of GaSb-based lasers grown by molecular beam epitaxy onto Si substrate. With standard design and technology we demonstrate pulsed laser operation at room temperature from the telecom wavelength range (1.5 μm) to the mid-IR (2.3 μm). A new structure design with a dedicated technology process allows cw lasing at room temperature.

Citation Download Citation

L. Cerutti, J. B. Rodriguez, J. R. Reboul, and E. Tournié "GaSb-based laser monolithically grown on Si substrate by molecular beam epitaxy", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681I (20 January 2012); https://doi.org/10.1117/12.908464

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KEYWORDS

Silicon

Gallium antimonide

Semiconductor lasers

Quantum wells

Continuous wave operation

Pulsed laser operation

Group III-V semiconductors

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