Paper
13 March 2012 Characterization and decomposition of self-aligned quadruple patterning friendly layout
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Abstract
Self-aligned quadruple patterning (SAQP) lithography is one of the major techniques for the future process requirement after 16nm/14nm technology node. In this paper, based on the existing knowledge of current 193nm lithography and process flow of SAQP, we will process an early study on the definition of SAQP-friendly layout. With the exploration of the feasible feature regions and possible combinations of adjacent features, we will define several simple but important geometry rules to help define the SAQP-friendliness. Then, we will introduce a conflicting graph algorithm to generate the feature region assignment for SAQP decomposition. Our experimental results validate our SAQP-friendly layout definition, and basic circuit building blocks in the low level metal layer are analyzed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongbo Zhang, Yuelin Du, Martin D. F. Wong, and Rasit O. Topaloglu "Characterization and decomposition of self-aligned quadruple patterning friendly layout", Proc. SPIE 8326, Optical Microlithography XXV, 83260F (13 March 2012); https://doi.org/10.1117/12.918078
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CITATIONS
Cited by 10 scholarly publications and 2 patents.
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KEYWORDS
Optical lithography

Photomasks

193nm lithography

Algorithm development

Electron beam lithography

Metals

Standards development

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