The fabrication and performance analysis of proton implantation VCSEL

Mingming Mao; Chen Xu; Simin Wei; Yiyang Xie; Tian Cao

doi:10.1117/12.915693

22 February 2012 The fabrication and performance analysis of proton implantation VCSEL

Mingming Mao, Chen Xu, Simin Wei, Yiyang Xie, Tian Cao

Proceedings Volume 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration; 83330M (2012) https://doi.org/10.1117/12.915693
Event: Photonics and Optoelectronics Meetings 2011, 2011, Wuhan, China

Abstract

Three different aperture diameters (6μm,8μm,10μm) of proton implantation vertical cavity surface emitting lasers (VCSEL) are fabricated by two different group energy bombardment, where the epitaxial structure is designed lasing at 850nm. The injection energy is 300kev, 230kev and 330kev, 250kev, 160kev respectively, in order to confine the current path. To avoid channel effect while injecting and to make the actual fabrication process behind convenient, 5000Å SiO₂ was deposited on the surface of the wafer. Photoresist and Au are used as the mask to protect the lasing area against bombardment, respectively. When the aperture diameters is 10μm and under the two times bombardment, the output power of continuously at room temperature is reached at 2.4mw, while the same aperture diameters under three times bombardment is only 0.5mw. Further analysis indicates that the distance of injection peak value from the active region is a critical parameter to determine the output power.

Citation Download Citation

Mingming Mao, Chen Xu, Simin Wei, Yiyang Xie, and Tian Cao "The fabrication and performance analysis of proton implantation VCSEL", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83330M (22 February 2012); https://doi.org/10.1117/12.915693

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