Electrical properties of black silicon

Zhengxi Cheng; Yongping Chen; Bin Ma

doi:10.1117/12.975674

15 October 2012 Electrical properties of black silicon

Zhengxi Cheng, Yongping Chen, Bin Ma

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 841918 (2012) https://doi.org/10.1117/12.975674
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Black silicon thin films with supersaturated heavily doped sulfur were fabricated on silicon substrates through femtosecond laser scanning the silicon substrate surface in SF6 atmosphere. The temperature characteristics of the carrier concentration and mobility of the two-layer structure, black silicon films/silicon substrate, were measured with variable temperature Hall test methods within the 15-300 K temperature range. Numerical empirical model of carrier mobility and carrier concentration of impurity ionization model were used to fit the temperature characteristics of the carrier concentration and mobility of the two-layer structure, black silicon films/silicon substrate at the same time. The properties of each layer were separated from the measured results. Activation energy E_ds was 0.0174 eV, the active sulfur impurity concentration was 3.2903×10¹⁹ cm^-3, the concentration of the substrate doped with phosphorus Ndb was 3.4030×10¹⁴ cm^-3, activation energy of the substrate doped with phosphorus E_db was 0.0483 eV.Activation energy of the substrate doped with phosphorus E_db and concentration N_db were close to the actual measured values，therefore the fitting was effective. Active sulfur concentration in the Black silicon film was very high, and carrier activation energy was very low, so carrier concentration was weakly related with temperature. Carrier mobility was also weakly related with temperature. Black silicon was close to the metal-insulation transition critical point.

Citation Download Citation

Zhengxi Cheng, Yongping Chen, and Bin Ma "Electrical properties of black silicon", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 841918 (15 October 2012); https://doi.org/10.1117/12.975674

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