Properties of the thin-film solar cells with heterojunctions Cu2S-Cd1-xZnxS and Cu2Se-Cd1-xZnxSe

M. A. Jafarov; E. F. Nasirov

doi:10.1117/12.929100

10 October 2012 Properties of the thin-film solar cells with heterojunctions Cu₂S-Cd₁-_xZn_xS and Cu₂Se-Cd₁-_xZn_xSe

M. A. Jafarov, E. F. Nasirov

Proceedings Volume 8470, Thin Film Solar Technology IV; 84700I (2012) https://doi.org/10.1117/12.929100
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

In recent years, resumed intensive studies of heterojunctions, in connection with the possibility of using them on the most economical and relatively efficient photodetectors. In this economy is determined by the structure of production technology and the value of the source material. Thus there is a substitution reaction on the surface of the films Cd_1-xZn_xS formed a second layer of Cu₂S, whose thickness is determined by the time of deposition. When light 1,45⋅10⁴ lux photocells studied Cu₂S-Cd_1-xZn_xS and Cu₂Se-Cd_1-xZn_xSe generated voltage 0,5÷0,6V and in 0,45-0,58V, current J_sc 15 ÷ 20 mA/sm² and 12-15mA/cm² and efficiency were = 11%. and 8%. respectively. It is established that with increasing content of Zn in the base material-circuit voltage U_os photocell increases and short-circuit current decreases. Using as a base material of solid solutions of Cd_1-xZn_xS and Cd_1-xZn_xSe causes an increase in the potential barrier at the contact.

Citation Download Citation

M. A. Jafarov and E. F. Nasirov "Properties of the thin-film solar cells with heterojunctions Cu₂S-Cd₁-_xZn_xS and Cu₂Se-Cd₁-_xZn_xSe", Proc. SPIE 8470, Thin Film Solar Technology IV, 84700I (10 October 2012); https://doi.org/10.1117/12.929100

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