Paper
24 October 2012 Sensitive detectors of terahertz radiation based on Pb1-xSnxTe(In)
D. E. Dolzhenko, A. V. Nicorici, L. I. Ryabova, D. R. Khokhlov
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Abstract
Doping of the lead telluride and related alloys with the group III impurities results in appearance of the unique physical features of a material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), high radiation hardness and many others. We present the physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, and others. We report on the performance of lead telluride-based single direct detectors. The optical NEP on the order of 10-19 W/Hz1/2 at T=1.57 K has been demonstrated at the wavelength of 350 m. The advantages of terahertz photodetecting systems based on the group III-doped IV-VI are summarized.
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D. E. Dolzhenko, A. V. Nicorici, L. I. Ryabova, and D. R. Khokhlov "Sensitive detectors of terahertz radiation based on Pb1-xSnxTe(In)", Proc. SPIE 8511, Infrared Remote Sensing and Instrumentation XX, 85110H (24 October 2012); https://doi.org/10.1117/12.928174
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KEYWORDS
Photodetectors

Semiconductors

Optical filters

Helium

Infrared radiation

Sensors

Black bodies

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