Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs

Shweta Tripathi; S. Jit

doi:10.1117/12.924519

15 October 2012 Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs

Shweta Tripathi, S. Jit

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492L (2012) https://doi.org/10.1117/12.924519
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

This paper presents an analytical model for C-V characteristics of short gate-length GaAs MESFET under illuminated condition. The non-analytic Gaussian doping profile commonly considered for the channel doping of an ion-implanted GaAs MESFET has been replaced by an analytic Gaussian-like function for the simplicity of the present model. When the computed results of the proposed model are compared with numerical simulation data obtained by ATLAS™ device simulator, an encouraging correspondence between the two lends credibility to our model.

Citation Download Citation

Shweta Tripathi and S. Jit "Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492L (15 October 2012); https://doi.org/10.1117/12.924519

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