Mid-infrared photonics devices in SOI

G. Z. Mashanovich; M. Nedeljkovic; M. M Milošević; Y. Hu; T. M. Ben Masaud; E. Jaberansary; X. Chen; M. Strain; M. Sorel; A. C. Peacock; H. M. H. Chong; G. T. Reed

doi:10.1117/12.2005341

14 March 2013 Mid-infrared photonics devices in SOI

G. Z. Mashanovich, M. Nedeljkovic, M. M Milošević, Y. Hu, T. M. Ben Masaud, E. Jaberansary, X. Chen, M. Strain, M. Sorel, A. C. Peacock, H. M. H. Chong, G. T. Reed

Author Affiliations +

Proceedings Volume 8629, Silicon Photonics VIII; 86290J (2013) https://doi.org/10.1117/12.2005341
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this paper we present silicon photonics devices designed for the 3-4μm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have propagation losses as low as ~ 4 dB/cm at 3.8μm. We also demonstrate MMIs with insertion loss of 0.25 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This combined with our previous results reported at 3.4μm confirm that SOI is a viable platform for the 3-4 μm region and that low loss mid-infrared passive devices can be realized on it.

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G. Z. Mashanovich, M. Nedeljkovic, M. M Milošević, Y. Hu, T. M. Ben Masaud, E. Jaberansary, X. Chen, M. Strain, M. Sorel, A. C. Peacock, H. M. H. Chong, and G. T. Reed "Mid-infrared photonics devices in SOI", Proc. SPIE 8629, Silicon Photonics VIII, 86290J (14 March 2013); https://doi.org/10.1117/12.2005341

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