Paper
31 March 1988 Dielectrics For Optoelectronic Device Applications On The III-V Compounds
Derek L Lile
Author Affiliations +
Proceedings Volume 0869, Technologies for Optoelectronics; (1988) https://doi.org/10.1117/12.943618
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The III -V compound semiconductors comprise an important class of materials for optoelectronic device applications. Despite this, it has not as yet proven possible to form insulators on any of these materials with a quality comparable to what can be achieved on Silicon using thermal Si02. This in turn has resulted in severe restrictions in device and integrated circuit development due to the reduced design flexibility imposed by this more limited technology base.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Derek L Lile "Dielectrics For Optoelectronic Device Applications On The III-V Compounds", Proc. SPIE 0869, Technologies for Optoelectronics, (31 March 1988); https://doi.org/10.1117/12.943618
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KEYWORDS
Dielectrics

Gallium arsenide

Semiconductors

Optoelectronics

Silicon

Field effect transistors

Chemical vapor deposition

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