Rectennas design using DG-MOSFETs

Raúl Rodríguez; B. González; J. García; M. Marrero-Martín; A. Hernández

doi:10.1117/12.2017149

28 May 2013 Rectennas design using DG-MOSFETs

Raúl Rodríguez, B. González, J. García, M. Marrero-Martín, A. Hernández

Author Affiliations +

Proceedings Volume 8764, VLSI Circuits and Systems VI; 876404 (2013) https://doi.org/10.1117/12.2017149
Event: SPIE Microtechnologies, 2013, Grenoble, France

Abstract

The objective of this work is to study the possibility of implementing SOI rectennas for UWB RFIDs, with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools: Sentaurus Device (created by Synopsys), and ADS (created by Agilent) where in a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectennas performance at high frequencies is simulated; numerical and electrical results are successfully compared.

Citation Download Citation

Raúl Rodríguez, B. González, J. García, M. Marrero-Martín, and A. Hernández "Rectennas design using DG-MOSFETs", Proc. SPIE 8764, VLSI Circuits and Systems VI, 876404 (28 May 2013); https://doi.org/10.1117/12.2017149

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE