Paper
9 July 2013 Defect structure and optical damage resistance of In:Er:LiTaO3 crystals
Ting Sun, Xiaodong Zhang, Liang Sun, Rui Wang
Author Affiliations +
Proceedings Volume 8786, Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers; 87862B (2013) https://doi.org/10.1117/12.2028697
Event: SPIE/SIOM Pacific Rim Laser Damage: Optical Materials for High-Power Lasers, 2013, Shanghai, China
Abstract
In:Er:LiTaO3 single crystals with 1.0mol.% Er3+ and various In3+ ions were grown by the Czochralski method from a congruent melt (CLi/CTa=0.946). Defect structure of the crystals was determined by their infrared absorption spectra. Threshold concentration of In3+ ion is 3.0mol.%. The optical damage resistance of In:Er:LiTaO3 crystals was characterized by the change of light-induced birefringence as well as distortion of transmitted beam pattern. Optical damage resistance of In:Er:LiTaO3 crystals significantly increases when the concentration of In3+ ion exceeds its threshold concentration. The optical damage resistance magnitude of In(3.0mol.%):Er:LiTaO3 crystal is two orders higher than that of Er:LiTaO3 crystal. The change of light-induced birefringence decreases with the increasing In3+ ion concentration. The optical damage resistance could be well understood in view of defect structure.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ting Sun, Xiaodong Zhang, Liang Sun, and Rui Wang "Defect structure and optical damage resistance of In:Er:LiTaO3 crystals", Proc. SPIE 8786, Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers, 87862B (9 July 2013); https://doi.org/10.1117/12.2028697
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Ions

Optical damage

Resistance

Absorption

Laser crystals

Crystallography

RELATED CONTENT


Back to Top