Characteristics of P3HT:PCBM bilayer middle-contact transistors incorporating a conjugated polyelectrolyte layer

Gil Jo Chae; Jung Hwa Seo

doi:10.1117/12.2023745

11 September 2013 Characteristics of P3HT:PCBM bilayer middle-contact transistors incorporating a conjugated polyelectrolyte layer

Gil Jo Chae, Jung Hwa Seo

Author Affiliations +

Proceedings Volume 8811, Physical Chemistry of Interfaces and Nanomaterials XII; 88110S (2013) https://doi.org/10.1117/12.2023745
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

We report the fabrication and characterization of solution-processed organic bilayer field effect transistors with a middle-contact configuration. P3HT and PCBM were chosen for a hole and electron transporting material, respectively. The P3HT:PCBM bilayer FET with a middle contact structure showed only p-type behavior with a hole mobility (μ_h) of ~ 10^-3 cm² V^-1 s^-1, which is a different result compared to the conventional top-contact ambipolar device. Electron injection was enabled by using a thin CPE layer beneath the PCBM layer. The thickness of the CPE layer is critical for achieving balanced hole and electron mobilities and provides an important variable for consideration in future optimization studies. More detailed mechanisms on the role of CPE layer and the middle-contact structure are currently under investigation.

Citation Download Citation

Gil Jo Chae and Jung Hwa Seo "Characteristics of P3HT:PCBM bilayer middle-contact transistors incorporating a conjugated polyelectrolyte layer", Proc. SPIE 8811, Physical Chemistry of Interfaces and Nanomaterials XII, 88110S (11 September 2013); https://doi.org/10.1117/12.2023745

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