Chemical mechanical polishing of boron-doped polycrystalline silicon

Hamidreza Pirayesh; Kenneth Cadien

doi:10.1117/12.2036822

7 March 2014 Chemical mechanical polishing of boron-doped polycrystalline silicon

Hamidreza Pirayesh, Kenneth Cadien

Proceedings Volume 8973, Micromachining and Microfabrication Process Technology XIX; 89730A (2014) https://doi.org/10.1117/12.2036822
Event: SPIE MOEMS-MEMS, 2014, San Francisco, California, United States

Abstract

Chemical mechanical polishing (CMP) is a technique which helps to print a smaller depth of focus and smoother surface in micro fabrication industry. In this project, boron doped polysilicon is used as a fill material for Through Silicon Vias (TSV) creating a 3D package. It is shown that the presence of boron as dopant suppresses the polysilicon polish rate. To increase the polish rate, understanding the mechanism of polish rate retardation is essential. We believe that the electrical effects play the major role in this phenomenon and by reducing this effect we are able to increase the polish rate.

Citation Download Citation

Hamidreza Pirayesh and Kenneth Cadien "Chemical mechanical polishing of boron-doped polycrystalline silicon", Proc. SPIE 8973, Micromachining and Microfabrication Process Technology XIX, 89730A (7 March 2014); https://doi.org/10.1117/12.2036822

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