Is ZnO as a universal semiconductor material an oxymoron?

B. Hussain; B. Kucukgok; M. Y. A. Raja; Benjamin Klein; N. Lu; I. T. Ferguson

doi:10.1117/12.2042926

8 March 2014 Is ZnO as a universal semiconductor material an oxymoron?

B. Hussain, B. Kucukgok, M. Y. A. Raja, Benjamin Klein, N. Lu, I. T. Ferguson

Author Affiliations +

Proceedings Volume 8987, Oxide-based Materials and Devices V; 898718 (2014) https://doi.org/10.1117/12.2042926
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

The wide-bandgap semiconductor ZnO has gained major interest in research community for its unique properties and wide range of applications. In this review article, we present synthesis techniques and a few emerging applications for ZnO. Common techniques for growing ZnO films are discussed briefly, and a detailed discussion of MOCVD growth of ZnO is provided citing previous experimental reports on this technique by our group and others. A few important and distinctive uses of ZnO are discussed for various applications focusing on the current limitations of ZnO to realize its feasibility in these applications.

Citation Download Citation

B. Hussain, B. Kucukgok, M. Y. A. Raja, Benjamin Klein, N. Lu, and I. T. Ferguson "Is ZnO as a universal semiconductor material an oxymoron?", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898718 (8 March 2014); https://doi.org/10.1117/12.2042926

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