Mid infrared luminescence of dilute nitride semiconductors: microscopic approach vs experiments

C. I. Oriaku; M. F. Pereira

doi:10.1117/12.2062018

5 September 2014 Mid infrared luminescence of dilute nitride semiconductors: microscopic approach vs experiments

C. I. Oriaku, M. F. Pereira

Proceedings Volume 9199, Terahertz Emitters, Receivers, and Applications V; 919910 (2014) https://doi.org/10.1117/12.2062018
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

In this paper, analytical expressions for optical nonlinearities are applied in the simulations of the absorption and photoluminescence of mid infrared materials. The fast and efficient approximations reproduce recent experimental data for dilute nitride semiconductors with very good agreement.

Citation Download Citation

C. I. Oriaku and M. F. Pereira "Mid infrared luminescence of dilute nitride semiconductors: microscopic approach vs experiments", Proc. SPIE 9199, Terahertz Emitters, Receivers, and Applications V, 919910 (5 September 2014); https://doi.org/10.1117/12.2062018

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