High Speed Data Control Circuit For Nanometric Electron Beam Lithography

Mitsuo Ohyama; Masahide Okumura; Norio Saitou

doi:10.1117/12.945657

14 June 1988 High Speed Data Control Circuit For Nanometric Electron Beam Lithography

Mitsuo Ohyama, Masahide Okumura, Norio Saitou

Proceedings Volume 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII; (1988) https://doi.org/10.1117/12.945657
Event: Medical Imaging II, 1988, Newport Beach, CA, United States

Abstract

A nanometric electron beam lithography system was developed with 0.1 um resolution using 0.03 μm electron beam. To get practical writing speed of 1 wafer/ hr with 0.1 μm resolution, many new technologies were developed in the system. Here, the high speed data control circuit is precisely described. It consists of a pattern generator (a buffer memory, a framing processor, decomposition processor and correction processor ) and a beam deflection controller.

Citation Download Citation

Mitsuo Ohyama, Masahide Okumura, and Norio Saitou "High Speed Data Control Circuit For Nanometric Electron Beam Lithography", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945657

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