Strong carrier localization in stacking faults in semipolar (11-22) GaN

Serdal Okur; Morteza Monavarian; Saikat Das; Natalia Izyumskaya; Fan Zhang; Vitaliy Avrutin; Hadis Morkoç; Ümit Özgür

doi:10.1117/12.2080248

13 March 2015 Strong carrier localization in stacking faults in semipolar (11-22) GaN

Serdal Okur, Morteza Monavarian, Saikat Das, Natalia Izyumskaya, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

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Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93632N (2015) https://doi.org/10.1117/12.2080248
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL) and time- and polarization-resolved PL. We demonstrate that the carrier recombination dynamics are substantially influenced due to strong carrier localization in the stacking faults. In addition to nonradiative recombination, carrier trapping/detrapping and carrier transfer between the stacking faults and donors are also found to be among the mechanisms affecting the recombination dynamics at different temperatures. PL decay times of both I₁-type BSF and 3.31 eV SF (E-type BSF or prismatic stacking fault) do not show temperature dependence up to 80 K while 3.31 eV SF exhibits longer PL decay times (~3 ns) at low temperatures as compared to I₁-type BSF (~1 ns), indicative of lower efficiency for radiative recombination. After 80 K, PL decay times decreased by power of ~-1 and ~-2 for 3.31 eV SF and I₁-type BSF, respectively. It is obtained from radiative decay times with respect to temperature that the carrier localization becomes higher in I₁-type BSF compared to 3.31 eV SF increasing the temperature. I₁-type BSF also shows higher PL intensity, which is attributed to larger density, and therefore, larger contribution to recombination dynamics as compared to other type of stacking faults. Polarization-resolved PL measurements also revealed that the degree of polarization for the I₁-type BSF (0.30) was twice that for the 3.31 eV SF.

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Serdal Okur, Morteza Monavarian, Saikat Das, Natalia Izyumskaya, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, and Ümit Özgür "Strong carrier localization in stacking faults in semipolar (11-22) GaN", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632N (13 March 2015); https://doi.org/10.1117/12.2080248

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