Paper
14 July 2015 Femtosecond laser-induced pre-damage dynamics in Al2O3/SiO2 mirror
Author Affiliations +
Abstract
UV femtosecond laser pulse was used to excite the ultrafast carrier dynamics inside the Al2O3/SiO2 high reflective mirror. Spectral shift between two different laser induced free electron absorption bands was observed. The former one centered at 406 nm undergo a fast decay of ~2.6 ps and a longer one of ~15 ps. Accompanied by the fast decay of the first absorption band, a new absorption band centered at 396 nm grew around ~2.8 ps after the laser excitation. The probable explanation the observed spectral shift of the free electron absorption band is that, the free carrier in the Al3O2 conductive band was trapped into some kind of defect state, which has an absorption peak at 396 nm, at a time scale of ~2.8 ps. Since the defect state has much longer lifetime than the initial generated free carriers in thee conductive band, probably under the condition of ultrafast high-frequency pulsed UV laser exposure, the incubation effect will decrease the laser damage threshold of the subsequent laser pulses.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juan Du, Zehan Li, Bing Xue, Takayoshi Kobayashi, Dongjia Han, Yuanan Zhao, and Yuxin Leng "Femtosecond laser-induced pre-damage dynamics in Al2O3/SiO2 mirror", Proc. SPIE 9532, Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers, 953209 (14 July 2015); https://doi.org/10.1117/12.2186934
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Picosecond phenomena

Pulsed laser operation

Absorption

Femtosecond phenomena

Ultraviolet radiation

Reflectors

Mirrors

RELATED CONTENT

Delay dependency of two-pulse femtosecond laser damage
Proceedings of SPIE (November 23 2015)
Ultrafast lasers as a versatile processing tool
Proceedings of SPIE (February 07 2000)
Femtosecond carrier dynamics in GaN
Proceedings of SPIE (April 23 2001)
Compact quantum-dot-based ultrafast lasers
Proceedings of SPIE (February 22 2008)

Back to Top