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5 October 2015 Metasurfaces and epsilon-near-zero modes in semiconductors (Presentation Recording)
Igal Brener, Salvatore Campione, Francois Marquier
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Proceedings Volume 9544, Metamaterials, Metadevices, and Metasystems 2015; 95442F (2015) https://doi.org/10.1117/12.2190299
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States
Abstract
Thin layers of semiconductors where the permittivity crosses zero, support a particular polariton mode called epsilon-near-zero (ENZ) mode. This zero crossing can be obtained near optical phonon resonances in dielectrics or the plasma frequency in doped semiconductors. The coupling of metamaterial resonators to these ENZ modes leads to particularly large Rabi splittings. ENZ layers can be added to metamaterial-based strongly coupled systems to increase this coupling even further. I will discuss several examples of these coupled systems that include metasurfaces, phonons, intersubband transitions and ENZ modes.
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Igal Brener, Salvatore Campione, and Francois Marquier "Metasurfaces and epsilon-near-zero modes in semiconductors (Presentation Recording)", Proc. SPIE 9544, Metamaterials, Metadevices, and Metasystems 2015, 95442F (5 October 2015); https://doi.org/10.1117/12.2190299
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KEYWORDS
Semiconductors
Phonons
Metamaterials
Dielectrics
Plasma
Polaritons
Resonators
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