AlGaInN laser diode technology for systems applications

S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Bockowski; M. Leszczyński; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski; S. Watson; A. E. Kelly

doi:10.1117/12.2207231

26 February 2016 AlGaInN laser diode technology for systems applications

S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. E. Kelly

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Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 974819 (2016) https://doi.org/10.1117/12.2207231
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, and A. E. Kelly "AlGaInN laser diode technology for systems applications", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974819 (26 February 2016); https://doi.org/10.1117/12.2207231

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