EUV Lithography: From the Very Beginning to the Eve of Manufacturing

Anthony Yen

doi:10.1117/12.2236044

16 June 2016 EUV Lithography: From the Very Beginning to the Eve of Manufacturing

Anthony Yen

Author Affiliations +

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 977632 (2016) https://doi.org/10.1117/12.2236044
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Thirty years have passed since the very first results of EUV imaging were made public by Kinoshita and co-workers of NTT Japan. Why does it take this long for EUV lithography to develop from infancy to near maturity? First, the advent and adoption of several key resolution-enhancing techniques along the way, combined with continual improvements in exposure tools, masks, and materials, greatly extended the life of optical lithography and made the need for EUVL less urgent, until now. Second, technological barriers that must be surmounted in order to put EUVL in manufacturing have indeed been high. In this presentation, I will review the early history of EUVL, point out how its life was extended beyond the initial phase of promising results, and present some most recent progress on the performance of its exposure tools, technology infrastructure, and patterning capability, and hopefully convince the audience that the technology is crossing the threshold to become a mainstream patterning technology for sub-10-nm generations of integrated circuits.

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Anthony Yen "EUV Lithography: From the Very Beginning to the Eve of Manufacturing", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977632 (16 June 2016); https://doi.org/10.1117/12.2236044

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KEYWORDS

Optical lithography

Extreme ultraviolet

Photomasks

Extreme ultraviolet lithography

Lithography

Manufacturing

Semiconducting wafers

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