Paper
26 May 2016 Development of graphene based detectors for EO/ IR applications
Ashok K. Sood, Isaac Lund, John W. Zeller, Yash R. Puri, Harry Efstathiadis, Pradeep Haldar, Nibir K. Dhar, Jay Lewis, Priyalal Wijewarnasuriya
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Abstract
Graphene has amazing abilities due to its unique band structure characteristics defining its enhanced electrical capabilities for a material with the highest characteristic mobility known to exist at room temperature. The high mobility of graphene occurs due to electron delocalization and weak electron phonon interaction making graphene an ideal material for electrical applications requiring high mobility and fast response times. In this paper, we are going to focus on the benefits along with some of the limitations with using graphene in infrared (IR) devices, electro-optic (EO) devices, and field effect transistors (FET) for radio frequency (RF) applications.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashok K. Sood, Isaac Lund, John W. Zeller, Yash R. Puri, Harry Efstathiadis, Pradeep Haldar, Nibir K. Dhar, Jay Lewis, and Priyalal Wijewarnasuriya "Development of graphene based detectors for EO/ IR applications", Proc. SPIE 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III, 98540D (26 May 2016); https://doi.org/10.1117/12.2229649
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Cited by 1 scholarly publication.
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KEYWORDS
Graphene

Doping

Infrared sensors

Field effect transistors

Infrared detectors

Sensors

Metals

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