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We investigate the evolution of current spreading, injection, and radiative differential efficiencies in InAs/InP quantum dash and InGaAsP quantum well lasers operating at 1550 nm under varying temperatures up to 80°C. Simulations in Crosslight PICS3D are compared to fabricated devices. The injection efficiency remains largely unaffected by temperature, with less efficient radiative recombination and current spreading accounting for the temperature sensitivity of device performance. A temperature-dependent 10% to 14% difference in the current spreading efficiency emerges as the primary cause of lower simulated efficiencies in these quantum dash lasers compared to the quantum wells.
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Sebastian Schaefer, Ras-Jeevan K. Obhi, Christopher E. Valdivia, Philip J. Poole, Jiaren Liu, Zhenguo Lu, Pedro J. Barrios, Karin Hinzer, "Effect of temperature on internal efficiency in InGaAsP/InP quantum dash lasers," Proc. SPIE PC11995, Physics and Simulation of Optoelectronic Devices XXX, PC119950C (1 April 2022); https://doi.org/10.1117/12.2607422