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InGaN-based three dimensional structures fabricated on (-1-12-2) through a regrowth technique are promising for highly efficient polychromatic emitters because the structures do not involve (0001) polar-plane facets. We experimentally demonstrate (1) fast radiative recombination in all the facet quantum wells, (2) structure and eventually emission color tunability through the control of mask geometry for the regrowth, and (3) LED operation with pastel and white color emission. These findings suggest promising features of our polar-plane-free faceted InGaN quantum wells as the next generation visible emitters.
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