Mary A. Breton,1 Karen Petrillo,1 Jennifer Church,1 Luciana Meli,1 Jennifer Fullam,1 Stuart Sieg,1 Romain Lallementhttps://orcid.org/0000-0001-8003-2413,1 Nelson Felix,1 Shimon Levi,2 Susan Zollinger,3 Felix Levitov,3 Sean Hand,4 Jason Osborne,4 Weijie Wang4
1IBM Thomas J. Watson Research Ctr. (United States) 2Applied Materials Israel, Ltd. (Israel) 3Applied Materials, Inc. (United States) 4Bruker Nano, Inc. (United States)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
This work proposes a methodology to characterize the extent of photoresists’ CD shrink from various SEM landing energy and imaging conditions, using both AFM metrology and post-etch pattern transfer as methods to evaluate the true physical CD. The resist shrink for both 1D and 2D features with varying resist volumes can be quantified through the various metrology techniques and post-etch dimensional data. Once characterized, material response during SEM exposure can be accounted for in any CDSEM data comparison or OPC model.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Mary A. Breton, Karen Petrillo, Jennifer Church, Luciana Meli, Jennifer Fullam, Stuart Sieg, Romain Lallement, Nelson Felix, Shimon Levi, Susan Zollinger, Felix Levitov, Sean Hand, Jason Osborne, Weijie Wang, "Resist shrink characterization methodology for more accurate CD metrology," Proc. SPIE PC12053, Metrology, Inspection, and Process Control XXXVI, PC120530C (13 June 2022); https://doi.org/10.1117/12.2614219