In order to characterize nanomaterial-based devices, such as transistors, in working conditions (e.g. in ambient), we are constantly developing and improving our tip-enhanced Raman spectroscopy (TERS) system to probe our samples with both high chemical sensitivity and high spatial resolution. We have achieved the detection of temperature at nanoscale volumes using our technique called tip-enhanced THz-Raman spectroscopy (TE-THzRS) and have achieved sub-nanometer spatial resolution through our environment stable TERS system. We have also probed nanometer scale strain variations in monolayer graphene membranes using TERS. Now, aside from studying the strain distribution in graphene wrinkles, we are also studying carrier doping, one aspect of graphene’s electronic properties, through TERS.
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