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21 March 2023 Green edge-emitting laser diodes with porous GaN cladding and deep ridge waveguiding
Emily S. Trageser, Matthew Wong, Ryan Anderson, Haojun Zhang, Jiaao Zhang, Arturo Juan, Steven DenBaars, Shuji Nakamura
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2650626
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
GaN based edge-emitting lasers traditionally rely on index contrast from InGaN or AlGaN cladding for modal confinement. However, defects introduced by lattice mismatch limit the feasible composition and layer thickness of alloyed cladding layers. Alternatively, porous GaN offers high refractive index contrast while remaining lattice-matched, making it a suitable candidate for cladding in green lasers. Edge-emitting laser diodes with nano-porous cladding were fabricated and reached electrical injection at 524 nm. In this work, a deep ridge waveguide structure was used to improve electrochemical etch selectivity of the porous cladding, resulting in higher efficiency and lower loss compared to shallow ridge devices.
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Emily S. Trageser, Matthew Wong, Ryan Anderson, Haojun Zhang, Jiaao Zhang, Arturo Juan, Steven DenBaars, and Shuji Nakamura "Green edge-emitting laser diodes with porous GaN cladding and deep ridge waveguiding", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2650626
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KEYWORDS
Cladding
Gallium nitride
Etching
Semiconductor lasers
Electrochemical etching
Dispersion
Indium gallium nitride
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