Interest in Be as a shallow acceptor in III-Nitrides is growing. Recently, we reported the first systematic study of MOCVD growth of GaN:Be. It is well known that impurities tend to segregate at threading dislocations in GaN. Despite the relatively high quality of MOCVD-grown GaN, lattice mismatch with foreign substrates such as sapphire usually results in dislocation density on the order of 108 cm-2. In this study, we investigate the impact of substrate quality on the GaN:Be. The effects of the substrate lattice mismatch and dislocation density on total Be incorporation, optical characteristics, and Be activation efficiency are discussed.
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