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We present the realization of low-absorptive GaN waveguide for cost-effective, ultra-compact visible light Photonic Integrated Circuit (PICs) applications. Within this framework, in order to achieve on chip fabrication of both active and passive parts on GaN platform, we realized the well-defined sensitivity of indium incorporation to InGaN layers (Quantum wells) to substrate misorientation during epitaxial growth of device structure with MOCVD. Fabrication of GaN waveguides on locally high misoriented areas (1 degree- 4 degree) coupled with neighboring laser diodes on flat areas (0.2 degree) allowed us to locally shift the absorption edge of InGaN quantum wells enabling efficient light transmission through the fabricated waveguides.
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Kiran Saba, Anna Kafar, Dario Schiavon, Szymon Grzanka, Piotr Perlin, "Ultra-compact low-loss GaN waveguides for potential large-scale Photonic Integrated Circuit (PICs) applications," Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648938